2N4973

2N4973

SKU: 2N4973
2N4973 Transistor Silicon PNP CASE: TO106 MAKE: Raytheon Semiconductor
Product specifications
Type Transistor Silicon PNP
Case TO106
Manufacturer Raytheon Semiconductor
Vbr CBO 20
Vbr CEO 15
Max. PD (W) 200m
Derate (Amb) (W/°C) 2.0m
hfe 20
Ic Max. (A) 30m
Icbo Max. @Vcb Max. (A) 25n
Polarity PNP
Trans. Freq (Hz) Min. 800M
@VCE (test) (V) 1.0
Oper. Temp (°C) Max. 125
@Ic (A) 3.0m
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.2 W
Maximum Collector-Base Voltage |Vcb| 15 V
Maximum Collector-Emitter Voltage |Vce| 15 V
Maximum Collector Current |Ic max| 0.03 A
Max. Operating Junction Temperature (Tj) 125 °C
Collector Capacitance (Cc) 2 pF
Transition Frequency (ft): 800 MHz
Forward Current Transfer Ratio (hFE), MIN 20
SKU 565174
Back