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2N4997
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2N4997

SKU: 2N4997
2N4997 Transistor Silicon NPN CASE: X55-1 MAKE: Generic
Product specifications
Type Transistor Silicon NPN
Case X55-1
Manufacturer Generic
Vbr CBO 30
Vbr CEO 18
Max. PD (W) 250m
C(ob) (F) .7p
Derate (Amb) (W/°C) 2.0m
hfe 30
Ic Max. (A) 50m
Icbo Max. @Vcb Max. (A) .10u
Polarity NPN
Trans. Freq (Hz) Min. 600M
@VCE (test) (V) 10
Oper. Temp (°C) Max. 150
@Ic (A) 2.0m
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.25 W
Maximum Collector-Base Voltage |Vcb| 30 V
Maximum Collector-Emitter Voltage |Vce| 18 V
Maximum Collector Current |Ic max| 0.05 A
Max. Operating Junction Temperature (Tj) 200 °C
Collector Capacitance (Cc) 0.7 pF
Transition Frequency (ft): 600 MHz
Forward Current Transfer Ratio (hFE), MIN 30
SKU 606108
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