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2N5006
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2N5006

SKU: 2N5006
2N5006 Transistor Silicon NPN CASE: TO61 MAKE: USA Make
Product specifications
Type Transistor Silicon NPN
Case TO61
Manufacturer USA Make
Vbr CBO 100
Vbr CEO 80
Max. PD (W) 100
Max. hFE 90
Min hFE 30
Ic Max. (A) 10
@Ic (test) (A) 5.0
Icbo Max. @Vcb Max. (A) 1.0m
Polarity NPN
Derate Above 25°C 666m
Trans. Freq (Hz) Min. 30M
Oper. Temp (°C) Max. 175
@VCE (V) 5.0
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 100 W
Maximum Collector-Base Voltage |Vcb| 100 V
Maximum Collector-Emitter Voltage |Vce| 80 V
Maximum Collector Current |Ic max| 10 A
Max. Operating Junction Temperature (Tj) 200 °C
Collector Capacitance (Cc) 275 pF
Transition Frequency (ft): 30 MHz
Forward Current Transfer Ratio (hFE), MIN 30
SKU 773467
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