The website uses cookies to understand site performance and process orders. We and our advertising partners also process personal data to deliver personalized and non-personalized advertising. By clicking OK, you explicitly consent to our tracking technologies and the processing of your data for ads personalization and conversion tracking. Click to learn more or change settings. 
    
2N5009

2N5009

SKU: 2N5009
2N5009 Transistor Silicon PNP CASE: TO61 MAKE: Generic
Product specifications
Type Transistor Silicon PNP
Case TO61
Manufacturer Philips
Vbr CBO 100
Vbr CEO 80
Max. PD (W) 100
Derate (Amb) (W/°C) 666m
Max. hFE 200
Min hFE 70
Ic Max. (A) 10
@Ic (test) (A) 5.0
Icbo Max. @Vcb Max. (A) 1.0m
Polarity PNP
Trans. Freq (Hz) Min. 40M
Oper. Temp (°C) Max. 175
@VCE (V) 5.0
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 100 W
Maximum Collector-Base Voltage |Vcb| 100 V
Maximum Collector-Emitter Voltage |Vce| 80 V
Maximum Collector Current |Ic max| 10 A
Max. Operating Junction Temperature (Tj) 200 °C
Collector Capacitance (Cc) 500 pF
Transition Frequency (ft): 40 MHz
Forward Current Transfer Ratio (hFE), MIN 70
SKU 368514
Back