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2N5011
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2N5011

SKU: 2N5011
2N5011 Transistor Silicon NPN CASE: TO5 MAKE: Generic
Datasheet
2N5011 Datasheet
Product specifications
Type Transistor Silicon NPN
Case TO5
Manufacturer Microsemi
Vbr CBO 600
Vbr CEO 600
Max. PD (W) 2.0
Max. hFE 180
Min hFE 30
Ic Max. (A) 500m
@Ic (test) (A) 25m
Icbo Max. @Vcb Max. (A) 6.0u
Polarity NPN
R(sat) (Û) 60
Derate Above 25°C 20m
Trans. Freq (Hz) Min. 20M
Oper. Temp (°C) Max. 175
@VCE (V) 10
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 2 W
Maximum Collector-Base Voltage |Vcb| 600 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 0.5 A
Max. Operating Junction Temperature (Tj) 200 °C
Collector Capacitance (Cc) 30 pF
Transition Frequency (ft): 20 MHz
Forward Current Transfer Ratio (hFE), MIN 30
SKU 115105
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