2N501A
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2N501A

SKU: 2N501A
2N501A Transistor Germanium PNP CASE: TO1 MAKE: Generic
Product specifications
Equivalent 2N501
Type Transistor Germanium PNP
Case TO1
Manufacturer Generic
Vbr CBO 15
Vbr CEO 12
Max. PD (W) 60m
C(ob) (F) 3.0p
Derate (Amb) (W/°C) 800u
hfe 4.5-
Ic Max. (A) 50m
Icbo Max. @Vcb Max. (A) 25u
Polarity PNP
@VCE (test) (V) .50
Oper. Temp (°C) Max. 100
@Ic (A) 2.0m
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.06 W
Maximum Collector-Base Voltage |Vcb| 15 V
Maximum Collector-Emitter Voltage |Vce| 12 V
Maximum Emitter-Base Voltage |Veb| 2 V
Maximum Collector Current |Ic max| 0.05 A
Max. Operating Junction Temperature (Tj) 85 °C
Collector Capacitance (Cc) 3 pF
Transition Frequency (ft): 80 MHz
Forward Current Transfer Ratio (hFE), MIN 95
SKU 773458
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