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2N5035
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2N5035

SKU: 2N5035
2N5035 Transistor Silicon NPN CASE: TO219B MAKE: Harris Semiconductor
Product specifications
Type Transistor Silicon NPN
Case TO219B
Manufacturer Harris Semiconductor
Vbr CBO 55
Vbr CEO 45
Max. PD (W) 83
Max. hFE 80
Min hFE 20
Ic Max. (A) 6.0
@Ic (test) (A) 4.0
Icbo Max. @Vcb Max. (A) 2.0m
Polarity NPN
R(sat) (Û) 4.0
Derate Above 25°C 666m
Oper. Temp (°C) Max. 140
@VCE (V) 4.0
Pinout Equivalence Number 3-14
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 83 W
Maximum Collector-Base Voltage |Vcb| 55 V
Maximum Collector-Emitter Voltage |Vce| 40 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 6 A
Max. Operating Junction Temperature (Tj) 150 °C
Transition Frequency (ft): 0.8 MHz
Forward Current Transfer Ratio (hFE), MIN 20
SKU 115107
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