The website uses cookies to understand site performance and process orders. We and our advertising partners also process personal data to deliver personalized and non-personalized advertising. By clicking OK, you explicitly consent to our tracking technologies and the processing of your data for ads personalization and conversion tracking. Click to learn more or change settings. 
    
2N5080
View detailed images (4)

2N5080

SKU: 2N5080
2N5080 Transistor Silicon NPN CASE: TO18 MAKE: Generic
Product specifications
Type Transistor Silicon NPN
Case TO18
Manufacturer Generic
Vbr CBO 60
Vbr CEO 30
Max. PD (W) 1.8
Max. hFE 500
Min hFE 200
Ic Max. (A) 1.0
@Ic (test) (A) 150m
Icbo Max. @Vcb Max. (A) 10u
Polarity NPN
R(sat) (Û) 1.0
Derate Above 25°C 10m
Trans. Freq (Hz) Min. 500M
Oper. Temp (°C) Max. 175
@VCE (V) 10
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.36 W
Maximum Collector-Base Voltage |Vcb| 60 V
Maximum Collector-Emitter Voltage |Vce| 30 V
Maximum Collector Current |Ic max| 1 A
Max. Operating Junction Temperature (Tj) 200 °C
Collector Capacitance (Cc) 7 pF
Transition Frequency (ft): 500 MHz
Forward Current Transfer Ratio (hFE), MIN 200
SKU 773405
Back