2N5096

SKU: 2N5096

2N5096 Transistor Silicon PNP CASE: TO39 MAKE: Generic

Product specifications

Weight	0.01 kg
Type	Transistor Silicon PNP
Case	TO39
Manufacturer	Solid State Devices Inc
Vbr CBO	500
Vbr CEO	450
Max. PD (W)	2.0
Derate (Amb) (W/°C)	2.6m
Max. hFE	200
Min hFE	20
Ic Max. (A)	1.0
@Ic (test) (A)	100m
Icbo Max. @Vcb Max. (A)	500n
Polarity	PNP
R(sat) (Û)	120
Trans. Freq (Hz) Min.	20M
Oper. Temp (°C) Max.	175
@VCE (V)	15
Pinout Equivalence Number	3-12
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	2 W
Maximum Collector-Base Voltage \|Vcb\|	500 V
Maximum Collector-Emitter Voltage \|Vce\|	450 V
Maximum Emitter-Base Voltage \|Veb\|	6 V
Maximum Collector Current \|Ic max\|	1 A
Max. Operating Junction Temperature (Tj)	175 °C
Collector Capacitance (Cc)	20 pF
Transition Frequency (ft):	20 MHz
Forward Current Transfer Ratio (hFE), MIN	20
SKU	368531

Back