| Weight |
0.01 kg
|
| Case |
TO39 |
| Type |
Transistor Silicon NPN |
| Manufacturer |
Motorola Semiconductor |
| Vbr CEO |
20 |
| Max. PD (W) |
2.5 |
| Max. hFE |
120 |
| Min hFE |
40 |
| Ic Max. (A) |
500m |
| @Ic (test) (A) |
50m |
| Polarity |
NPN |
| Trans. Freq (Hz) Min. |
1.2G |
| @VCE (V) |
15 |
| Pinout Equivalence Number |
3-12 |
| Surface Mounted Yes/No |
NO |
| Maximum Collector Power Dissipation (Pc) |
2.5 W |
| Maximum Collector-Base Voltage |Vcb| |
40 V |
| Maximum Collector-Emitter Voltage |Vce| |
20 V |
| Maximum Emitter-Base Voltage |Veb| |
3 V |
| Maximum Collector Current |Ic max| |
0.4 A |
| Max. Operating Junction Temperature (Tj) |
200 °C |
| Collector Capacitance (Cc) |
3.5 pF |
| Transition Frequency (ft): |
1200 MHz |
| Forward Current Transfer Ratio (hFE), MIN |
40 |
| SKU |
21415 |