2N5112
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2N5112

SKU: 2N5112
2N5112 Transistor Silicon PNP CASE: TO59 MAKE: Motorola Semiconductor
Product specifications
Type Transistor Silicon PNP
Case TO59
Manufacturer Motorola Semiconductor
Vbr CBO 40
Vbr CEO 40
Max. PD (W) 34
Derate (Amb) (W/°C) 229m
Max. hFE 60
Min hFE 15
Ic Max. (A) 1.0
@Ic (test) (A) 500m
Icbo Max. @Vcb Max. (A) 75u
Polarity PNP
R(sat) (Û) 1.8
Trans. Freq (Hz) Min. 100M
Oper. Temp (°C) Max. 175
@VCE (V) 4.0
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 34 W
Maximum Collector-Base Voltage |Vcb| 40 V
Maximum Collector-Emitter Voltage |Vce| 40 V
Maximum Collector Current |Ic max| 1 A
Max. Operating Junction Temperature (Tj) 175 °C
Collector Capacitance (Cc) 500 pF
Transition Frequency (ft): 1 MHz
Forward Current Transfer Ratio (hFE), MIN 15
SKU 773333
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