2N511B

SKU: 2N511B

2N511B Transistor Germanium PNP CASE: TO3 MAKE: Generic

Product specifications

Weight	0.01 kg
Type	Transistor Germanium PNP
Case	TO3
Manufacturer	Generic
Vbr CBO	80
Vbr CEO	40
Max. hFE	60
Min hFE	20
Ic Max. (A)	25
@Ic (test) (A)	10
Icbo Max. @Vcb Max. (A)	5.0m
Polarity	PNP
R(sat) (Û)	64m
Derate Above 25°C	2.0
Trans. Freq (Hz) Min.	260k
Oper. Temp (°C) Max.	100
@VCE (V)	2.0
Pinout Equivalence Number	3-14
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	150 W
Maximum Collector-Base Voltage \|Vcb\|	80 V
Maximum Collector-Emitter Voltage \|Vce\|	45 V
Maximum Emitter-Base Voltage \|Veb\|	30 V
Maximum Collector Current \|Ic max\|	25 A
Max. Operating Junction Temperature (Tj)	100 °C
Transition Frequency (ft):	0.1 MHz
Forward Current Transfer Ratio (hFE), MIN	20
SKU	601623

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