The website uses cookies to understand site performance and process orders. We and our advertising partners also process personal data to deliver personalized and non-personalized advertising. By clicking OK, you explicitly consent to our tracking technologies and the processing of your data for ads personalization and conversion tracking. Click to learn more or change settings. 
    
2N5129
View detailed images (12)

2N5129

SKU: 2N5129
2N5129 Transistor Silicon NPN CASE: TO106 MAKE: National Semiconductor - NSC
Price:
£5.75 Inc. VAT (£4.79 Ex. VAT)
£5.75 Inc. VAT (£4.79 Ex. VAT)
Qty
  • 13 pieces in 1-2 Days
  • More pieces shipped in 14 days
?
Product specifications
Type Transistor Silicon NPN
Case TO106
Manufacturer National Semiconductor - NSC
Vbr CBO 15
Vbr CEO 12
Max. PD (W) 300m
C(ob) (F) 10p
t(on) Delay (S) 10n
Derate (Amb) (W/°C) 3.0m
t(f) Max. (S) 60n
hfe 35
Ic Max. (A) 500m
Icbo Max. @Vcb Max. (A) 50n
Polarity NPN
Tr Max. (s) 25n
t(stor) Max. (S) 350n
Trans. Freq (Hz) Min. 200M
@VCE (test) (V) 10
Oper. Temp (°C) Max. 150
@Ic (A) 50m
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.2 W
Maximum Collector-Base Voltage |Vcb| 15 V
Maximum Collector-Emitter Voltage |Vce| 12 V
Maximum Emitter-Base Voltage |Veb| 3 V
Maximum Collector Current |Ic max| 0.5 A
Max. Operating Junction Temperature (Tj) 125 °C
Collector Capacitance (Cc) 10 pF
Transition Frequency (ft): 150 MHz
Forward Current Transfer Ratio (hFE), MIN 35
SKU 115112
Back