2N512A

SKU: 2N512A

2N512A Transistor Germanium PNP CASE: TO3 MAKE: Motorola Semiconductor

Product specifications

Weight	0.01 kg
Type	Transistor Germanium PNP
Case	TO3
Manufacturer	Motorola Semiconductor
Vbr CBO	60
Vbr CEO	30
Max. hFE	60
Min hFE	20
Ic Max. (A)	25
@Ic (test) (A)	15
Icbo Max. @Vcb Max. (A)	5.0m
Polarity	PNP
R(sat) (Û)	50m
Derate Above 25°C	2.0
Trans. Freq (Hz) Min.	280k
Oper. Temp (°C) Max.	100
@VCE (V)	2.0
Pinout Equivalence Number	3-14
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	150 W
Maximum Collector-Base Voltage \|Vcb\|	60 V
Maximum Collector-Emitter Voltage \|Vce\|	40 V
Maximum Emitter-Base Voltage \|Veb\|	30 V
Maximum Collector Current \|Ic max\|	25 A
Max. Operating Junction Temperature (Tj)	100 °C
Transition Frequency (ft):	0.12 MHz
Forward Current Transfer Ratio (hFE), MIN	20
SKU	606117

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