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2N514B
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2N514B

SKU: 2N514B
2N514B Transistor Germanium PNP CASE: TO3 MAKE: Generic
Product specifications
Type Transistor Germanium PNP
Case TO3
Manufacturer Generic
Vbr CBO 80
Vbr CEO 80
Max. PD (W) 80
Min hFE 40-
Ic Max. (A) 25
@Ic (test) (A) 6.3
Icbo Max. @Vcb Max. (A) 2.0m
Polarity PNP
R(sat) (Û) 25m
Derate Above 25°C 1.4
Trans. Freq (Hz) Min. 7.0k-
Oper. Temp (°C) Max. 100
@VCE (V) 1.5
Pinout Equivalence Number 3-14
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 150 W
Maximum Collector-Base Voltage |Vcb| 80 V
Maximum Collector-Emitter Voltage |Vce| 45 V
Maximum Emitter-Base Voltage |Veb| 30 V
Maximum Collector Current |Ic max| 25 A
Max. Operating Junction Temperature (Tj) 100 °C
Transition Frequency (ft): 0.2 MHz
Forward Current Transfer Ratio (hFE), MIN 20
SKU 773306
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