2N5162
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2N5162

SKU: 2N5162
2N5162 Transistor Silicon PNP CASE: TO62 MAKE: Generic
Product specifications
Type Transistor Silicon PNP
Case TO62
Manufacturer Generic
Vbr CBO 60
Vbr CEO 40
Max. PD (W) 50
Derate (Amb) (W/°C) 285m
Min hFE 10
Ic Max. (A) 5.0
@Ic (test) (A) 2.0
Icbo Max. @Vcb Max. (A) 200u
Polarity PNP
Oper. Temp (°C) Max. 175
@VCE (V) 5.0
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 50 W
Maximum Collector-Base Voltage |Vcb| 60 V
Maximum Collector-Emitter Voltage |Vce| 40 V
Maximum Emitter-Base Voltage |Veb| 4 V
Maximum Collector Current |Ic max| 5 A
Max. Operating Junction Temperature (Tj) 200 °C
Collector Capacitance (Cc) 60 pF
Transition Frequency (ft): 500 MHz
Forward Current Transfer Ratio (hFE), MIN 10
SKU 368551
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