2N5183

2N5183

SKU: 2N5183
2N5183 Transistor Silicon NPN CASE: TO18 MAKE: Generic
Datasheet
2N5183 Datasheet
Product specifications
Type Transistor Silicon NPN
Case TO18
Manufacturer Central Semiconductor
Vbr CBO 18
Vbr CEO 18
Max. PD (W) 500m
Derate (Amb) (W/°C) 3.3m
hfe 70=
Ic Max. (A) 1.0
Icbo Max. @Vcb Max. (A) 500n
Polarity NPN
Trans. Freq (Hz) Min. 62M
@VCE (test) (V) 12
Oper. Temp (°C) Max. 175
@Ic (A) 10m
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.5 W
Maximum Collector-Base Voltage |Vcb| 18 V
Maximum Collector-Emitter Voltage |Vce| 18 V
Maximum Emitter-Base Voltage |Veb| 7 V
Maximum Collector Current |Ic max| 1 A
Max. Operating Junction Temperature (Tj) 175 °C
Collector Capacitance (Cc) 20 pF
Transition Frequency (ft): 125 MHz
Forward Current Transfer Ratio (hFE), MIN 75
SKU 115120
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