The website uses cookies to understand site performance and process orders. We and our advertising partners also process personal data to deliver personalized and non-personalized advertising. By clicking OK, you explicitly consent to our tracking technologies and the processing of your data for ads personalization and conversion tracking. Click to learn more or change settings. 
    
2N5185
View detailed images (1)

2N5185

SKU: 2N5185
2N5185 Transistor Silicon NPN CASE: R119 MAKE: Motorola Semiconductor
Product specifications
Type Transistor Silicon NPN
Case R119
Manufacturer Motorola Semiconductor
Vbr CEO 120
Max. PD (W) 1.0
Min hFE 10
Ic Max. (A) 50m
@Ic (test) (A) 50m
Polarity NPN
Derate Above 25°C 6.6m
Trans. Freq (Hz) Min. 30M
Oper. Temp (°C) Max. 175
@VCE (V) 10
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 1 W
Maximum Collector-Base Voltage |Vcb| 120 V
Maximum Collector-Emitter Voltage |Vce| 120 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 0.05 A
Max. Operating Junction Temperature (Tj) 175 °C
Collector Capacitance (Cc) 3.5 pF
Transition Frequency (ft): 50 MHz
Forward Current Transfer Ratio (hFE), MIN 10
SKU 606119
Back