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2N5218
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2N5218

SKU: 2N5218
2N5218 Transistor Silicon NPN CASE: TO61 MAKE: USA Make
Product specifications
Type Transistor Silicon NPN
Case TO61
Manufacturer USA Make
Vbr CBO 220
Vbr CEO 200
Max. PD (W) 50
t(f) Max. (S) 1.0u
Max. hFE 120
Min hFE 15
Ic Max. (A) 10
@Ic (test) (A) 5.0
Icbo Max. @Vcb Max. (A) 500n
Polarity NPN
Tr Max. (s) 600n
Derate Above 25°C 500m
Trans. Freq (Hz) Min. 40M
Oper. Temp (°C) Max. 175#
@VCE (V) 5.0
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 50 W
Maximum Collector-Base Voltage |Vcb| 220 V
Maximum Collector-Emitter Voltage |Vce| 200 V
Maximum Emitter-Base Voltage |Veb| 8 V
Maximum Collector Current |Ic max| 10 A
Max. Operating Junction Temperature (Tj) 200 °C
Collector Capacitance (Cc) 200 pF
Transition Frequency (ft): 40 MHz
Forward Current Transfer Ratio (hFE), MIN 15
SKU 773201
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