2N5250

SKU: 2N5250

2N5250 Transistor Silicon NPN CASE: TO114 MAKE: USA Make

Product specifications

Weight	0.01 kg
Type	Transistor Silicon NPN
Case	TO114
Manufacturer	USA Make
Vbr CBO	125
Vbr CEO	100
Max. PD (W)	350
t(f) Max. (S)	500n
Max. hFE	40
Min hFE	10
Ic Max. (A)	90
@Ic (test) (A)	70
Icbo Max. @Vcb Max. (A)	1.0u
Polarity	NPN
Tr Max. (s)	2000n
Derate Above 25°C	2.0
Trans. Freq (Hz) Min.	10M
Oper. Temp (°C) Max.	175
@VCE (V)	5.0
Pinout Equivalence Number	3-12
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	350 W
Maximum Collector-Base Voltage \|Vcb\|	125 V
Maximum Collector-Emitter Voltage \|Vce\|	100 V
Maximum Emitter-Base Voltage \|Veb\|	10 V
Maximum Collector Current \|Ic max\|	90 A
Max. Operating Junction Temperature (Tj)	200 °C
Transition Frequency (ft):	10 MHz
Forward Current Transfer Ratio (hFE), MIN	10
SKU	606122

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