2N5306A

2N5306A

SKU: 2N5306A
2N5306A Transistor Silicon NPN CASE: TO98-3 MAKE: Generic
Product specifications
Type Transistor Silicon NPN
Case TO98-3
Manufacturer General Electric Solid State
Vbr CEO 25
Max. PD (W) 400m
Max. hFE 70k
Min hFE 7.0k
Ic Max. (A) 300m
@Ic (test) (A) 2.0m
Icbo Max. @Vcb Max. (A) 100n
Mat. Silicon Logic
Polarity NPN
R(sat) (Û) 7.0
Derate Above 25°C 4.0m
Trans. Freq (Hz) Min. 60M
@VCE (test) 5.0
Oper. Temp (°C) Max. 150
Pinout Equivalence Number 3-35
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.4 W
Maximum Collector-Base Voltage |Vcb| 25 V
Maximum Collector-Emitter Voltage |Vce| 25 V
Maximum Emitter-Base Voltage |Veb| 12 V
Maximum Collector Current |Ic max| 0.3 A
Max. Operating Junction Temperature (Tj) 125 °C
Collector Capacitance (Cc) 10 pF
Transition Frequency (ft): 60 MHz
Forward Current Transfer Ratio (hFE), MIN 7000
SKU 773134
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