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2N5312
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2N5312

SKU: 2N5312
2N5312 Transistor Silicon PNP CASE: TO61 MAKE: USA Make
Product specifications
Type Transistor Silicon PNP
Case TO61
Manufacturer USA Make
Vbr CBO 80
Vbr CEO 80
Max. PD (W) 50
Derate (Amb) (W/°C) 500m
t(f) Max. (S) 500n
Max. hFE 90
Min hFE 30
Ic Max. (A) 10
@Ic (test) (A) 10
Icbo Max. @Vcb Max. (A) 10u
Polarity PNP
Tr Max. (s) 500n
Trans. Freq (Hz) Min. 30M
Oper. Temp (°C) Max. 175
@VCE (V) 5.0
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 50 W
Maximum Collector-Base Voltage |Vcb| 80 V
Maximum Collector-Emitter Voltage |Vce| 80 V
Maximum Emitter-Base Voltage |Veb| 6 V
Maximum Collector Current |Ic max| 10 A
Max. Operating Junction Temperature (Tj) 200 °C
Collector Capacitance (Cc) 500 pF
Transition Frequency (ft): 30 MHz
Forward Current Transfer Ratio (hFE), MIN 30
SKU 773130
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