The website uses cookies to understand site performance and process orders. We and our advertising partners also process personal data to deliver personalized and non-personalized advertising. By clicking OK, you explicitly consent to our tracking technologies and the processing of your data for ads personalization and conversion tracking. Click to learn more or change settings. 
    
2N5318
View detailed images (1)

2N5318

SKU: 2N5318
2N5318 Transistor Silicon PNP CASE: TO211MA MAKE: ITT Industries
Product specifications
Type Transistor Silicon PNP
Case TO211MA
Manufacturer ITT Industries
Vbr CBO 100
Vbr CEO 100
Max. PD (W) 50
Derate (Amb) (W/°C) 500m
t(f) Max. (S) 200n
Max. hFE 90
Min hFE 30
Ic Max. (A) 10
@Ic (test) (A) 5.0
Icbo Max. @Vcb Max. (A) 10u
Polarity PNP
Tr Max. (s) 200n
Trans. Freq (Hz) Min. 30M
Oper. Temp (°C) Max. 175
@VCE (V) 5.0
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 50 W
Maximum Collector-Base Voltage |Vcb| 100 V
Maximum Collector-Emitter Voltage |Vce| 100 V
Maximum Emitter-Base Voltage |Veb| 6 V
Maximum Collector Current |Ic max| 10 A
Max. Operating Junction Temperature (Tj) 200 °C
Collector Capacitance (Cc) 500 pF
Transition Frequency (ft): 30 MHz
Forward Current Transfer Ratio (hFE), MIN 30
SKU 546073
Back