The website uses cookies to understand site performance and process orders. We and our advertising partners also process personal data to deliver personalized and non-personalized advertising. By clicking OK, you explicitly consent to our tracking technologies and the processing of your data for ads personalization and conversion tracking. Click to learn more or change settings. 
    
2N5325
View detailed images (13)

2N5325

SKU: 2N5325
2N5325 Transistor Germanium PNP CASE: TO3 MAKE: Motorola Semiconductor
Product specifications
Type Transistor Germanium PNP
Case TO3
Manufacturer Motorola Semiconductor
Vbr CBO 325
Vbr CEO 200
Max. PD (W) 56
t(f) Max. (S) 7.0u
Max. hFE 60
Min hFE 20
Ic Max. (A) 10
@Ic (test) (A) 5.0
Polarity PNP
Tr Max. (s) 15u
R(sat) (Û) 50m
Derate Above 25°C 670m
Oper. Temp (°C) Max. 125
@VCE (V) 2.0
Pinout Equivalence Number 3-14
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 56 W
Maximum Collector-Base Voltage |Vcb| 325 V
Maximum Collector-Emitter Voltage |Vce| 200 V
Maximum Emitter-Base Voltage |Veb| 4 V
Maximum Collector Current |Ic max| 10 A
Max. Operating Junction Temperature (Tj) 110 °C
Transition Frequency (ft): 2 MHz
Forward Current Transfer Ratio (hFE), MIN 20
SKU 773090
Back