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2N5329
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2N5329

SKU: 2N5329
2N5329 Transistor Silicon NPN CASE: TO61 MAKE: Generic
Product specifications
Type Transistor Silicon NPN
Case TO61
Manufacturer Generic
Vbr CBO 150
Vbr CEO 90
Max. PD (W) 65
t(f) Max. (S) 1.1u+
Max. hFE 120
Min hFE 40
Ic Max. (A) 20
@Ic (test) (A) 10
Polarity NPN
Tr Max. (s) 350n
R(sat) (Û) 90m
Derate Above 25°C 645m
Trans. Freq (Hz) Min. 80M
Oper. Temp (°C) Max. 175
@VCE (V) 2.0
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 65 W
Maximum Collector-Base Voltage |Vcb| 150 V
Maximum Collector-Emitter Voltage |Vce| 90 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 20 A
Max. Operating Junction Temperature (Tj) 200 °C
Transition Frequency (ft): 80 MHz
Forward Current Transfer Ratio (hFE), MIN 40
SKU 773086
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