2N5330

SKU: 2N5330

2N5330 Transistor Silicon NPN CASE: TO61 MAKE: Generic

Datasheet

2N5330 Datasheet

Product specifications

Weight	0.01 kg
Type	Transistor Silicon NPN
Case	TO61
Manufacturer	New Jersey Semiconductor
Vbr CBO	150
Vbr CEO	90
Max. PD (W)	80
t(f) Max. (S)	1.2u+
Max. hFE	120
Min hFE	40
Ic Max. (A)	30
@Ic (test) (A)	10
Polarity	NPN
Tr Max. (s)	350n
R(sat) (Û)	60m
Derate Above 25°C	800m
Trans. Freq (Hz) Min.	80M
Oper. Temp (°C) Max.	175
@VCE (V)	2.0
Pinout Equivalence Number	3-12
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	80 W
Maximum Collector-Base Voltage \|Vcb\|	150 V
Maximum Collector-Emitter Voltage \|Vce\|	90 V
Maximum Emitter-Base Voltage \|Veb\|	5 V
Maximum Collector Current \|Ic max\|	30 A
Max. Operating Junction Temperature (Tj)	200 °C
Transition Frequency (ft):	80 MHz
Forward Current Transfer Ratio (hFE), MIN	40
SKU	773084

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