The website uses cookies to understand site performance and process orders. We and our advertising partners also process personal data to deliver personalized and non-personalized advertising. By clicking OK, you explicitly consent to our tracking technologies and the processing of your data for ads personalization and conversion tracking. Click to learn more or change settings. 
    
2N5331

2N5331

SKU: 2N5331
2N5331 Transistor Silicon NPN CASE: TO63 MAKE: Generic
Product specifications
Type Transistor Silicon NPN
Case TO63
Manufacturer Generic
Vbr CBO 150
Vbr CEO 90
Max. PD (W) 100
t(f) Max. (S) 1.2u+
Max. hFE 120
Min hFE 40
Ic Max. (A) 30
@Ic (test) (A) 10
Polarity NPN
Tr Max. (s) 350n
R(sat) (Û) 60m
Derate Above 25°C 1.0
Trans. Freq (Hz) Min. 80M
Oper. Temp (°C) Max. 175
@VCE (V) 2.0
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 100 W
Maximum Collector-Base Voltage |Vcb| 150 V
Maximum Collector-Emitter Voltage |Vce| 90 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 30 A
Max. Operating Junction Temperature (Tj) 200 °C
Transition Frequency (ft): 80 MHz
Forward Current Transfer Ratio (hFE), MIN 40
SKU 773083
Back