The website uses cookies to understand site performance and process orders. We and our advertising partners also process personal data to deliver personalized and non-personalized advertising. By clicking OK, you explicitly consent to our tracking technologies and the processing of your data for ads personalization and conversion tracking. Click to learn more or change settings. 
    
2N5334
View detailed images (13)

2N5334

SKU: 2N5334
2N5334 Transistor Silicon NPN CASE: TO39 MAKE: Generic
Datasheet
2N5334 Datasheet
Product specifications
Type Transistor Silicon NPN
Case TO39
Manufacturer Central Semiconductor
Vbr CBO 60
Vbr CEO 60
Max. PD (W) 6.0
t(f) Max. (S) 100n
Max. hFE 150
Min hFE 30
Ic Max. (A) 3.0
@Ic (test) (A) 1.0
Icbo Max. @Vcb Max. (A) 5.0u
Polarity NPN
Tr Max. (s) 50n
Derate Above 25°C 34m
Trans. Freq (Hz) Min. 40M
Oper. Temp (°C) Max. 175
@VCE (V) 2.0
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 6 W
Maximum Collector-Base Voltage |Vcb| 60 V
Maximum Collector-Emitter Voltage |Vce| 60 V
Maximum Emitter-Base Voltage |Veb| 8 V
Maximum Collector Current |Ic max| 3 A
Max. Operating Junction Temperature (Tj) 200 °C
Collector Capacitance (Cc) 75 pF
Transition Frequency (ft): 40 MHz
Forward Current Transfer Ratio (hFE), MIN 30
SKU 606126
Back