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2N5335
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2N5335

SKU: 2N5335
2N5335 Transistor Silicon NPN CASE: TO39 MAKE: Motorola Semiconductor
Datasheet
2N5335 Datasheet
Product specifications
Type Transistor Silicon NPN
Case TO39
Manufacturer Motorola Semiconductor
Vbr CBO 80
Vbr CEO 80
Max. PD (W) 6.0
t(f) Max. (S) 100n
Max. hFE 150
Min hFE 30
Ic Max. (A) 3.0
@Ic (test) (A) 1.0
Icbo Max. @Vcb Max. (A) 5.0u
Polarity NPN
Tr Max. (s) 50n
Derate Above 25°C 34m
Trans. Freq (Hz) Min. 40M
Oper. Temp (°C) Max. 175
@VCE (V) 2.0
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 6 W
Maximum Collector-Base Voltage |Vcb| 80 V
Maximum Collector-Emitter Voltage |Vce| 80 V
Maximum Emitter-Base Voltage |Veb| 8 V
Maximum Collector Current |Ic max| 3 A
Max. Operating Junction Temperature (Tj) 200 °C
Collector Capacitance (Cc) 75 pF
Transition Frequency (ft): 40 MHz
Forward Current Transfer Ratio (hFE), MIN 30
SKU 368563
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