2N5357

SKU: 2N5357

2N5357 Transistor Silicon PNP CASE: TO37-1 MAKE: Generic

Product specifications

Weight	0.01 kg
Type	Transistor Silicon PNP
Case	TO37-1
Manufacturer	Generic
Vbr CBO	300
Vbr CEO	300
Max. PD (W)	30
Derate (Amb) (W/°C)	240m
t(f) Max. (S)	100n
Max. hFE	100
Min hFE	25
Ic Max. (A)	3.0
@Ic (test) (A)	500m
Icbo Max. @Vcb Max. (A)	25u
Polarity	PNP
Tr Max. (s)	100n
R(sat) (Û)	3.0
Trans. Freq (Hz) Min.	50M
Oper. Temp (°C) Max.	175
@VCE (V)	5.0
Pinout Equivalence Number	3-12
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	30 W
Maximum Collector-Base Voltage \|Vcb\|	300 V
Maximum Collector-Emitter Voltage \|Vce\|	300 V
Maximum Emitter-Base Voltage \|Veb\|	4 V
Maximum Collector Current \|Ic max\|	3 A
Max. Operating Junction Temperature (Tj)	200 °C
Collector Capacitance (Cc)	60 pF
Transition Frequency (ft):	50 MHz
Forward Current Transfer Ratio (hFE), MIN	25
SKU	773064

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