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2N5369
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2N5369

SKU: 2N5369
2N5369 Transistor Silicon NPN CASE: X55-1 MAKE: Generic
Datasheet
2N5369 Datasheet
Product specifications
Type Transistor Silicon NPN
Case X55-1
Manufacturer Micro Electronics
Vbr CBO 60
Vbr CEO 30
Max. PD (W) 360m
C(ob) (F) 8p
Derate (Amb) (W/°C) 2.9m
t(f) Max. (S) 350n+
hfe 50
Ic Max. (A) 500m
Icbo Max. @Vcb Max. (A) 50n
Polarity NPN
Tr Max. (s) 40n
Trans. Freq (Hz) Min. 250M
@VCE (test) (V) 10
Oper. Temp (°C) Max. 150
@Ic (A) 1.0m
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.36 W
Maximum Collector-Base Voltage |Vcb| 60 V
Maximum Collector-Emitter Voltage |Vce| 30 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 0.5 A
Max. Operating Junction Temperature (Tj) 150 °C
Collector Capacitance (Cc) 8 pF
Transition Frequency (ft): 250 MHz
Forward Current Transfer Ratio (hFE), MIN 100
SKU 773055
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