2N5372

SKU: 2N5372

2N5372 Transistor Silicon PNP CASE: X55-1 MAKE: Generic

Datasheet

2N5372 Datasheet

Product specifications

Weight	0.01 kg
Type	Transistor Silicon PNP
Case	X55-1
Manufacturer	Micro Electronics
Vbr CBO	60
Vbr CEO	30
Max. PD (W)	620m
C(ob) (F)	10p
Derate (Amb) (W/°C)	2.9m
hfe	40
Ic Max. (A)	800m
Icbo Max. @Vcb Max. (A)	50n
Polarity	PNP
Trans. Freq (Hz) Min.	150M
@VCE (test) (V)	10
Oper. Temp (°C) Max.	150
@Ic (A)	150m
Pinout Equivalence Number	3-12
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	0.36 W
Maximum Collector-Base Voltage \|Vcb\|	60 V
Maximum Collector-Emitter Voltage \|Vce\|	30 V
Maximum Emitter-Base Voltage \|Veb\|	5 V
Maximum Collector Current \|Ic max\|	0.5 A
Max. Operating Junction Temperature (Tj)	150 °C
Collector Capacitance (Cc)	10 pF
Transition Frequency (ft):	150 MHz
Forward Current Transfer Ratio (hFE), MIN	40
SKU	368568

Back