2N5381

SKU: 2N5381

2N5381 Transistor Silicon NPN CASE: X55-1 MAKE: Generic

Datasheet

2N5381 Datasheet

Product specifications

Weight	0.01 kg
Type	Transistor Silicon NPN
Case	X55-1
Manufacturer	Central Semiconductor
Vbr CBO	60
Vbr CEO	40
Max. PD (W)	500m
C(ob) (F)	4.0p
t(on) Delay (S)	35n
Derate (Amb) (W/°C)	2.8m
t(f) Max. (S)	50n
hfe	100
Ic Max. (A)	200m
Icbo Max. @Vcb Max. (A)	50n
Polarity	NPN
Tr Max. (s)	35n
t(stor) Max. (S)	200n
Trans. Freq (Hz) Min.	300M
@VCE (test) (V)	10
Oper. Temp (°C) Max.	150
@Ic (A)	1.0m
Pinout Equivalence Number	3-17
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	0.36 W
Maximum Collector-Base Voltage \|Vcb\|	80 V
Maximum Collector-Emitter Voltage \|Vce\|	40 V
Maximum Emitter-Base Voltage \|Veb\|	5 V
Maximum Collector Current \|Ic max\|	0.2 A
Max. Operating Junction Temperature (Tj)	150 °C
Collector Capacitance (Cc)	4 pF
Transition Frequency (ft):	300 MHz
Forward Current Transfer Ratio (hFE), MIN	100
SKU	368573

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