The website uses cookies to understand site performance and process orders. We and our advertising partners also process personal data to deliver personalized and non-personalized advertising. By clicking OK, you explicitly consent to our tracking technologies and the processing of your data for ads personalization and conversion tracking. Click to learn more or change settings. 
    
2N5382
View detailed images (1)

2N5382

SKU: 2N5382
2N5382 Transistor Silicon PNP CASE: X55-1 MAKE: Generic
Product specifications
Type Transistor Silicon PNP
Case X55-1
Manufacturer Generic
Vbr CBO 40
Vbr CEO 40
Max. PD (W) 500m
C(ob) (F) 4.5p
t(on) Delay (S) 35n
Derate (Amb) (W/°C) 2.8m
t(f) Max. (S) 60n
hfe 50
Ic Max. (A) 200m
Icbo Max. @Vcb Max. (A) 50n
Polarity PNP
Tr Max. (s) 35n
t(stor) Max. (S) 200n
Trans. Freq (Hz) Min. 200M
@VCE (test) (V) 10
Oper. Temp (°C) Max. 140
@Ic (A) 1.0m
Pinout Equivalence Number 3-17
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.36 W
Maximum Collector-Base Voltage |Vcb| 40 V
Maximum Collector-Emitter Voltage |Vce| 40 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 0.2 A
Max. Operating Junction Temperature (Tj) 150 °C
Collector Capacitance (Cc) 4.5 pF
Transition Frequency (ft): 200 MHz
Forward Current Transfer Ratio (hFE), MIN 50
SKU 773049
Back