The website uses cookies to understand site performance and process orders. We and our advertising partners also process personal data to deliver personalized and non-personalized advertising. By clicking OK, you explicitly consent to our tracking technologies and the processing of your data for ads personalization and conversion tracking. Click to learn more or change settings. 
    
2N5387

2N5387

SKU: 2N5387
2N5387 Transistor Silicon NPN CASE: TO61 MAKE: Generic
Product specifications
Type Transistor Silicon NPN
Case TO61
Manufacturer Generic
Vbr CBO 200
Vbr CEO 200
Max. PD (W) 3.5
Max. hFE 100
Min hFE 25
Ic Max. (A) 7.5
@Ic (test) (A) 2.0
Icbo Max. @Vcb Max. (A) 1.0m
Polarity NPN
Derate Above 25°C 1.0
Trans. Freq (Hz) Min. 15M
Oper. Temp (°C) Max. 175
@VCE (V) 5.0
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 100 W
Maximum Collector-Base Voltage |Vcb| 200 V
Maximum Collector-Emitter Voltage |Vce| 200 V
Maximum Collector Current |Ic max| 7.5 A
Max. Operating Junction Temperature (Tj) 200 °C
Transition Frequency (ft): 15 MHz
Forward Current Transfer Ratio (hFE), MIN 25
SKU 773047
Back