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2N539A
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2N539A

SKU: 2N539A
2N539A Transistor Germanium PNP CASE: TO10 MAKE: Generic
Product specifications
Equivalent 2N539
Type Transistor Germanium PNP
Case TO10
Manufacturer Generic
Vbr CBO 80
Max. PD (W) 10
Max. hFE 75
Min hFE 30
Ic Max. (A) 3.5
@Ic (test) (A) 2.0
Icbo Max. @Vcb Max. (A) 2.0m
Polarity PNP
Derate Above 25°C 454m
Trans. Freq (Hz) Min. 7.0k-
Oper. Temp (°C) Max. 95
@VCE (V) 2.0
Pinout Equivalence Number 3-17
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 34 W
Maximum Collector-Base Voltage |Vcb| 80 V
Maximum Collector-Emitter Voltage |Vce| 55 V
Maximum Emitter-Base Voltage |Veb| 28 V
Maximum Collector Current |Ic max| 3.5 A
Max. Operating Junction Temperature (Tj) 85 °C
Transition Frequency (ft): 0.2 MHz
Forward Current Transfer Ratio (hFE), MIN 30
SKU 773039
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