2N5407

SKU: 2N5407

2N5407 Transistor Silicon PNP CASE: TO5 MAKE: Generic

Datasheet

2N5407 Datasheet

Product specifications

Weight	0.01 kg
Type	Transistor Silicon PNP
Case	TO5
Manufacturer	New Jersey Semiconductor
Vbr CBO	100
Vbr CEO	100
Max. PD (W)	1.0
Derate (Amb) (W/°C)	50m
t(f) Max. (S)	300n
Max. hFE	120
Min hFE	40
Ic Max. (A)	5.0
@Ic (test) (A)	2.0
Icbo Max. @Vcb Max. (A)	10u
Polarity	PNP
Tr Max. (s)	500n
R(sat) (Û)	800m
Trans. Freq (Hz) Min.	40M
Oper. Temp (°C) Max.	175
@VCE (V)	5.0
Pinout Equivalence Number	3-12
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	1 W
Maximum Collector-Base Voltage \|Vcb\|	100 V
Maximum Collector-Emitter Voltage \|Vce\|	100 V
Maximum Collector Current \|Ic max\|	5 A
Max. Operating Junction Temperature (Tj)	200 °C
Collector Capacitance (Cc)	150 pF
Transition Frequency (ft):	40 MHz
Forward Current Transfer Ratio (hFE), MIN	40
SKU	773013

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