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2N5409
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2N5409

SKU: 2N5409
2N5409 Transistor Silicon PNP CASE: TO59 MAKE: Generic
Product specifications
Type Transistor Silicon PNP
Case TO59
Manufacturer Generic
Vbr CBO 100
Vbr CEO 100
Max. PD (W) 30
Derate (Amb) (W/°C) 300m
t(f) Max. (S) 200n
Max. hFE 60
Min hFE 20
Ic Max. (A) 5.0
@Ic (test) (A) 2.0
Icbo Max. @Vcb Max. (A) 10u
Polarity PNP
Tr Max. (s) 500n
R(sat) (Û) 1.0
Trans. Freq (Hz) Min. 40M
Oper. Temp (°C) Max. 175
@VCE (V) 5.0
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 30 W
Maximum Collector-Base Voltage |Vcb| 100 V
Maximum Collector-Emitter Voltage |Vce| 100 V
Maximum Collector Current |Ic max| 5 A
Max. Operating Junction Temperature (Tj) 200 °C
Collector Capacitance (Cc) 150 pF
Transition Frequency (ft): 40 MHz
Forward Current Transfer Ratio (hFE), MIN 20
SKU 773011
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