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2N5412
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2N5412

SKU: 2N5412
2N5412 Transistor Silicon NPN CASE: TO62 MAKE: Generic
Product specifications
Type Transistor Silicon NPN
Case TO62
Manufacturer Generic
Vbr CBO 80
Vbr CEO 60
Max. PD (W) 100
t(f) Max. (S) 300n
Max. hFE 160
Min hFE 10
Ic Max. (A) 15
@Ic (test) (A) 2.0
Icbo Max. @Vcb Max. (A) 1.0m
Polarity NPN
Tr Max. (s) 200n
R(sat) (Û) 100m
Derate Above 25°C 671m
Trans. Freq (Hz) Min. 60M
Oper. Temp (°C) Max. 175
@VCE (V) 1.5
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 100 W
Maximum Collector-Base Voltage |Vcb| 80 V
Maximum Collector-Emitter Voltage |Vce| 60 V
Maximum Collector Current |Ic max| 15 A
Max. Operating Junction Temperature (Tj) 175 °C
Transition Frequency (ft): 60 MHz
Forward Current Transfer Ratio (hFE), MIN 10
SKU 773006
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