2N5415S

SKU: 2N5415S

2N5415S Transistor Silicon PNP CASE: TO39 MAKE: SGS Thomson

Datasheet

2N5415S Datasheet

Product specifications

Weight	0.01 kg
Type	Transistor Silicon PNP
Case	TO39
Manufacturer	SGS Thomson
Vbr CBO	200
Vbr CEO	200
Max. PD (W)	10
Derate (Amb) (W/°C)	56m
Max. hFE	150
Min hFE	30
Ic Max. (A)	1.0
@Ic (test) (A)	50m
Icbo Max. @Vcb Max. (A)	50u
Polarity	PNP
Trans. Freq (Hz) Min.	15M
Oper. Temp (°C) Max.	175
@VCE (V)	10
Pinout Equivalence Number	3-12
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	1 W
Maximum Collector-Base Voltage \|Vcb\|	200 V
Maximum Collector-Emitter Voltage \|Vce\|	200 V
Maximum Emitter-Base Voltage \|Veb\|	4 V
Maximum Collector Current \|Ic max\|	1 A
Max. Operating Junction Temperature (Tj)	200 °C
Collector Capacitance (Cc)	15 pF
Transition Frequency (ft):	115 MHz
Forward Current Transfer Ratio (hFE), MIN	30
SKU	606132

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