2N5416S

SKU: 2N5416S

2N5416S Transistor Silicon PNP CASE: TO5 MAKE: ST Microelectronics - STM

Price:

£5.75 Inc. VAT (£4.79 Ex. VAT)

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Datasheet

2N5416S Datasheet

Product specifications

Weight	0.01 kg
Type	Transistor Silicon PNP
Case	TO5
Manufacturer	ST Microelectronics - STM
Vbr CBO	350
Vbr CEO	300
Max. PD (W)	10#
Derate (Amb) (W/°C)	57m
Max. hFE	120
Min hFE	30
Ic Max. (A)	1.0
@Ic (test) (A)	50m
Polarity	PNP
Oper. Temp (°C) Max.	200
@VCE (V)	10
Pinout Equivalence Number	3-12
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	10 W
Maximum Collector-Base Voltage \|Vcb\|	350 V
Maximum Collector-Emitter Voltage \|Vce\|	300 V
Maximum Emitter-Base Voltage \|Veb\|	6 V
Maximum Collector Current \|Ic max\|	1 A
Max. Operating Junction Temperature (Tj)	200 °C
Collector Capacitance (Cc)	15 pF
Forward Current Transfer Ratio (hFE), MIN	30
SKU	772998

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