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2N5417
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2N5417

SKU: 2N5417
2N5417 Transistor Silicon NPN CASE: TO39 MAKE: Semiconductor Technology
Product specifications
Type Transistor Silicon NPN
Case TO39
Manufacturer Semiconductor Technology
Vbr CBO 40
Vbr CEO 35
Max. PD (W) 500m
C(ob) (F) 8p
Derate (Amb) (W/°C) 3.3m
hfe 35
Ic Max. (A) 500m
Icbo Max. @Vcb Max. (A) .01u
Polarity NPN
Trans. Freq (Hz) Min. 250M
@VCE (test) (V) 10
Oper. Temp (°C) Max. 175
@Ic (A) 1.0m
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.5 W
Maximum Collector-Base Voltage |Vcb| 40 V
Maximum Collector-Emitter Voltage |Vce| 35 V
Maximum Collector Current |Ic max| 0.5 A
Max. Operating Junction Temperature (Tj) 200 °C
Collector Capacitance (Cc) 8 pF
Transition Frequency (ft): 250 MHz
Forward Current Transfer Ratio (hFE), MIN 80
SKU 573267
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