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2N5429
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2N5429

SKU: 2N5429
2N5429 Transistor Silicon NPN CASE: TO66 MAKE: Generic
Datasheet
2N5429 Datasheet
Product specifications
Type Transistor Silicon NPN
Case TO66
Manufacturer MOSPEC Semiconductor
Vbr CBO 100
Vbr CEO 100
Max. PD (W) 40
t(f) Max. (S) 200n
Max. hFE 120
Min hFE 30
Ic Max. (A) 7.0
@Ic (test) (A) 2.0
Icbo Max. @Vcb Max. (A) 10u
Polarity NPN
Tr Max. (s) 100n
Derate Above 25°C 228m
Trans. Freq (Hz) Min. 30M
Oper. Temp (°C) Max. 175
@VCE (V) 2.0
Pinout Equivalence Number 3-14
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 40 W
Maximum Collector-Base Voltage |Vcb| 100 V
Maximum Collector-Emitter Voltage |Vce| 100 V
Maximum Emitter-Base Voltage |Veb| 6 V
Maximum Collector Current |Ic max| 7 A
Max. Operating Junction Temperature (Tj) 200 °C
Collector Capacitance (Cc) 250 pF
Transition Frequency (ft): 30 MHz
Forward Current Transfer Ratio (hFE), MIN 30
SKU 368581
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