2N5439

2N5439

SKU: 2N5439
2N5439 Transistor Germanium PNP CASE: TO3 MAKE: Generic
Product specifications
Type Transistor Germanium PNP
Case TO3
Manufacturer Generic
Vbr CBO 110
Vbr CEO 90
Max. PD (W) 120
t(f) Max. (S) 12u
Max. hFE 120
Min hFE 40
Ic Max. (A) 60
@Ic (test) (A) 25
Icbo Max. @Vcb Max. (A) 10m
Polarity PNP
Tr Max. (s) 12u
Derate Above 25°C 1.4
Oper. Temp (°C) Max. 125
@VCE (V) 2.0
Pinout Equivalence Number 3-14
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 120 W
Maximum Collector-Base Voltage |Vcb| 110 V
Maximum Collector-Emitter Voltage |Vce| 90 V
Maximum Emitter-Base Voltage |Veb| 2 V
Maximum Collector Current |Ic max| 60 A
Max. Operating Junction Temperature (Tj) 110 °C
Transition Frequency (ft): 0.35 MHz
Forward Current Transfer Ratio (hFE), MIN 40
SKU 772977
Back