The website uses cookies to understand site performance and process orders. We and our advertising partners also process personal data to deliver personalized and non-personalized advertising. By clicking OK, you explicitly consent to our tracking technologies and the processing of your data for ads personalization and conversion tracking. Click to learn more or change settings. 
    
2N5487

2N5487

SKU: 2N5487
2N5487 Transistor Silicon NPN CASE: R55 MAKE: Generic
Product specifications
Type Transistor Silicon NPN
Case R55
Manufacturer Generic
Vbr CBO 120
Vbr CEO 80
Max. PD (W) 15
t(f) Max. (S) 450n+
Max. hFE 300
Min hFE 100
Ic Max. (A) 5.0
@Ic (test) (A) 1.0
Icbo Max. @Vcb Max. (A) 10u
Polarity NPN
Tr Max. (s) 125n
Derate Above 25°C 149m
Trans. Freq (Hz) Min. 40M
Oper. Temp (°C) Max. 175
@VCE (V) 2.0
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 15 W
Maximum Collector-Base Voltage |Vcb| 120 V
Maximum Collector-Emitter Voltage |Vce| 80 V
Maximum Collector Current |Ic max| 5 A
Max. Operating Junction Temperature (Tj) 200 °C
Collector Capacitance (Cc) 75 pF
Transition Frequency (ft): 40 MHz
Forward Current Transfer Ratio (hFE), MIN 100
SKU 606136
Back