2N5527
View detailed images (12)

2N5527

SKU: 2N5527
2N5527 Transistor Silicon NPN CASE: TO5 MAKE: Generic
Product specifications
Type Transistor Silicon NPN
Case TO5
Manufacturer Generic
Vbr CBO 60
Vbr CEO 40
Max. PD (W) 5.0
Max. hFE 200
Min hFE 40
Ic Max. (A) 5.0
@Ic (test) (A) 3.0
Icbo Max. @Vcb Max. (A) 1.0m
Polarity NPN
R(sat) (Û) 3.7
Derate Above 25°C 28m
Trans. Freq (Hz) Min. 200M
Oper. Temp (°C) Max. 175
@VCE (V) 5.0
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 5 W
Maximum Collector-Base Voltage |Vcb| 60 V
Maximum Collector-Emitter Voltage |Vce| 40 V
Maximum Emitter-Base Voltage |Veb| 3 V
Maximum Collector Current |Ic max| 5 A
Max. Operating Junction Temperature (Tj) 200 °C
Transition Frequency (ft): 200 MHz
Forward Current Transfer Ratio (hFE), MIN 40
SKU 772916
Back