2N5529

SKU: 2N5529

2N5529 Transistor Silicon NPN CASE: TO61 MAKE: Generic

Product specifications

Weight	0.01 kg
Type	Transistor Silicon NPN
Case	TO61
Manufacturer	Generic
Vbr CBO	60
Vbr CEO	40
Max. PD (W)	35
Max. hFE	200
Min hFE	40
Ic Max. (A)	10
@Ic (test) (A)	3.0
Icbo Max. @Vcb Max. (A)	1.0m
Polarity	NPN
R(sat) (Û)	3.7
Derate Above 25°C	20m
Trans. Freq (Hz) Min.	200M
Oper. Temp (°C) Max.	175
@VCE (V)	5.0
Pinout Equivalence Number	3-12
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	35 W
Maximum Collector-Base Voltage \|Vcb\|	60 V
Maximum Collector-Emitter Voltage \|Vce\|	40 V
Maximum Emitter-Base Voltage \|Veb\|	3 V
Maximum Collector Current \|Ic max\|	10 A
Max. Operating Junction Temperature (Tj)	200 °C
Transition Frequency (ft):	200 MHz
Forward Current Transfer Ratio (hFE), MIN	40
SKU	772914

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