2N5535

SKU: 2N5535

2N5535 Transistor Silicon NPN CASE: TO61 MAKE: Generic

Product specifications

Weight	0.01 kg
Type	Transistor Silicon NPN
Case	TO61
Manufacturer	Generic
Vbr CBO	60
Vbr CEO	50
Max. PD (W)	50
Max. hFE	150
Min hFE	30
Ic Max. (A)	20
@Ic (test) (A)	10
Icbo Max. @Vcb Max. (A)	1.0m
Polarity	NPN
R(sat) (Û)	6.2
Derate Above 25°C	28m
Trans. Freq (Hz) Min.	150M
Oper. Temp (°C) Max.	175
@VCE (V)	5.0
Pinout Equivalence Number	3-12
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	50 W
Maximum Collector-Base Voltage \|Vcb\|	60 V
Maximum Collector-Emitter Voltage \|Vce\|	50 V
Maximum Emitter-Base Voltage \|Veb\|	3 V
Maximum Collector Current \|Ic max\|	20 A
Max. Operating Junction Temperature (Tj)	200 °C
Transition Frequency (ft):	150 MHz
Forward Current Transfer Ratio (hFE), MIN	10
SKU	772908

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