2N5552

SKU: 2N5552

2N5552 Transistor Silicon NPN CASE: TO31 MAKE: Generic

Product specifications

Weight	0.01 kg
Type	Transistor Silicon NPN
Case	TO31
Manufacturer	Generic
Vbr CBO	120
Vbr CEO	80
Max. PD (W)	15
t(f) Max. (S)	700n+
Max. hFE	250
Min hFE	40
Ic Max. (A)	10
@Ic (test) (A)	500m
Icbo Max. @Vcb Max. (A)	200n
Polarity	NPN
Tr Max. (s)	100n
Derate Above 25°C	150m
Trans. Freq (Hz) Min.	30M
Oper. Temp (°C) Max.	175
@VCE (V)	2.0
Pinout Equivalence Number	3-12
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	15 W
Maximum Collector-Base Voltage \|Vcb\|	120 V
Maximum Collector-Emitter Voltage \|Vce\|	80 V
Maximum Emitter-Base Voltage \|Veb\|	7 V
Maximum Collector Current \|Ic max\|	10 A
Max. Operating Junction Temperature (Tj)	200 °C
Collector Capacitance (Cc)	250 pF
Transition Frequency (ft):	30 MHz
Forward Current Transfer Ratio (hFE), MIN	40
SKU	772860

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