2N5560

SKU: 2N5560

2N5560 Transistor Silicon NPN CASE: TO61 MAKE: Siliconix

Product specifications

Weight	0.01 kg
Type	Transistor Silicon NPN
Case	TO61
Manufacturer	Siliconix
Vbr CBO	175
Vbr CEO	120
Max. PD (W)	150
t(f) Max. (S)	2u+
Max. hFE	90
Min hFE	30
Ic Max. (A)	30
@Ic (test) (A)	15
Polarity	NPN
Tr Max. (s)	1u
R(sat) (Û)	50m
Derate Above 25°C	1.4
Trans. Freq (Hz) Min.	40M
Oper. Temp (°C) Max.	175
@VCE (V)	2.0
Pinout Equivalence Number	3-12
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	150 W
Maximum Collector-Base Voltage \|Vcb\|	175 V
Maximum Collector-Emitter Voltage \|Vce\|	120 V
Maximum Emitter-Base Voltage \|Veb\|	10 V
Maximum Collector Current \|Ic max\|	30 A
Max. Operating Junction Temperature (Tj)	200 °C
Collector Capacitance (Cc)	600 pF
Transition Frequency (ft):	40 MHz
Forward Current Transfer Ratio (hFE), MIN	30
SKU	772851

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